Exploring the Role of Topological Insulators in Next-Generation Electronics
DOI:
https://doi.org/10.36676/mdjp.v1.i1.3Keywords:
Topological insulators, Electronic properties, Surface states, Bulk states, Field-effect transistorsAbstract
Topological insulators have emerged as a novel class of materials with unique electronic properties that hold great promise for next-generation electronics. This paper explores the role of topological insulators in advancing electronic devices and circuits beyond conventional semiconductor technology. Beginning with an overview of the fundamental principles underlying topological insulators, we delve into their distinctive electronic structure, characterized by robust conducting surface states and insulating bulk states. We discuss the potential applications of topological insulators in electronic devices, such as field-effect transistors, spintronic devices, and quantum computing architectures. Furthermore, we examine recent experimental advancements and theoretical developments in the field, highlighting key challenges and opportunities for harnessing the full potential of topological insulators in next-generation electronics. Through a comprehensive analysis of both theoretical principles and practical implementations, this paper aims to shed light on the transformative impact of topological insulators on the future of electronic technology.
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